Polished Silicon Wafers

Grade: prime, test, dummy

Product specifications:
Diameter: 2", 3", 4", 6", 8", 12"
Growth mode: CZ
Dopants: P, P+, Boron/N, N+, Phos, Sb, As
Orientation: <100>, <111>
Negative rate: P: 0.001-300, N: Photos 0.0007-100, Sb. 0.0006-0.02
Oxygen content: 6-18PPMA (New ASTM)
Carbon content: 0.5PPMA Max
Body metal content: 5 * 1010 atoms/cm2 Max
Dislocation: None
Total flatness: 2.0 Microns Max
Total thickness change: 3.0 Microns Max
Local flatness: 1.0 Microns Max
Warpage: 30 Microns Max
Thickness: Target+/-15 Microns
Frontal particle count: 0.3 Microns 10 Max/Worker 0.2 Microns 10 Max/Worker
Silicon front: BSD/Poly/SiO2/Etched
Hard/Soft laser marking