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Saniwave Technology Co., Ltd.
Website: www.saniwaveltd.com
Tel: +86-755-89216755
Fax: +86-755-89264521
E-mail: info@saniwaveltd.com
Address: 601, Building T, Hengyu Science
and Technology Park, No.1 Ruiji Road,
Longgang District, Shenzhen, China
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Silicon Wafers |
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| Product >> Silicon Wafers >> All categories |
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Number： |
SOW06 |
Name： |
Silicon oxide wafer |
Specifications： |
6“，8“ |
Remarks： |
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Category： |
Silicon Wafers |
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| Product description |
Silicon oxide wafer
Oxidized silicon wafer refers to the thermal growth of a uniform dielectric thin film on the surface of a silicon wafer, used as insulation or mask material. The oxidation process includes high-temperature dry oxygen oxidation and high-temperature wet oxygen oxidation. The company adopts imported advanced oxidation equipment and processes to achieve uniform and accurate generation of the oxide layer.
Size: 2 ", 4", 6 ", 8", 10 ", 12"
N-type/P-type, intrinsic (undoped)
Total thickness: 250~600 μ m customizable
Thickness error: ± 10 μ m
Oxide layer thickness: 50nm~2000nm (conventional 100nm, 200nm, 300nm, 500nm, 1000nm)
Flatness (TIR):<3 μ m
Curvature (BOW): ≤ 15 μ m
TTV: ≤15μm，30μm
Roughness:<0.5nm
Electrical resistivity: 0.001~20000 (Ω· cm) according to customer requirements
Crystal orientation:<100>;< 110>;< 111>
Level: P
Surface treatment: single throw, double throw.
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| Click：39 Time：2024-08-05 【Print】 【Close】 |
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