Silicon Wafer Epitaxial Processing Services
SiC Wafer Epitaxial Processing Services
Substrate Diameter: 2", 3", 4", 6", 8", 12"
Substrate Growth Method: CZ, FZ
Substrate Thype: N type, P type
Deposition process: LPCVD, PECVD, Sputtering
Thin Film Layers: Pt, Ti, AL, Au, Cr, Si, SiO2, Si3N4, Polycrystalline silicon, etc.
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