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Saniwave Technology Co., Ltd.
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Tel: +86-755-89216755
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IV III-V Wafers
 Product >> IV III-V Wafers >> All categories
 
Number：
 31111434016
Name：
 GaAs Wafers
Specifications：
Remarks：
Category：
 IV III-V Wafers
 
   Product description

GaAs Wafers

Growth Method: VGF

Conduct Type: S-I-N
Dopant: Undoped
Diameter: 1", 2", 3", 4"
Orientation: (100)± 0.50
OF location/length: EJ[ 0 -1-1]± 0.50/16±1
IF location/length: EJ[ 0 -1 1 ]± 0.50/7±1
Resistivity: Min 0.9E8 Max 1.2E8 ohm.cm
Mobility:Min 5277
Max 5318 cm2/v.s
EPD: Min 500 Max 700/  cm2
Thickness: 350±20μm
Edge Rounding: 0.25 mmR
TTV/TIR: Max 101m
BOW: Max 10μm
Warp: Max 10μm
Partical  Count: ＜50(size＞0.3μm,Count/wafer)
SurfaceFinish– front: Polished  
Surface Finish –back: Polished  
Epi-Ready: Yes
Click：8  Time：2026-03-11 【Print】 【Close】
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