GaN Wafers

Diameter: Primarily 2-inch and 4-inch, 6-inch

Crystal Orientation: C-plane (0001), semi-polar (11-22), etc. Primarily C-plane (0001) <111> or <100> C-plane or semi-polar

Thickness: 350 ± 25 μm (typical) 430 μm (2-inch standard) Can be as low as 19 μm (after thinning) 300–400 μm

Dislocation Density: < 10⁴ cm⁻², extremely low defect rate, optimal epitaxial quality ~10⁸–10¹⁰ cm⁻², high lattice mismatch ~10⁸ cm⁻², requires buffer layer optimization ~10⁶ cm⁻², good thermal matching

Conductivity: Can be fabricated in N-type, undoped (UID), and semi-insulating (SI) types. Insulator Conductive Conductive, thermal conductivity up to 490 W/m·K