InP Wafers

Crystal Orientation: Typically <100> ±0.5°, some products support <111> ±0.5°
Diameter Tolerance:
2 inches: 50.8 ± 0.3 mm
3 inches: 76.2 ± 0.3 mm
4 inches: 100 ± 0.3 mm
Thickness: Commonly 350 μm, 500 μm, 625 μm (±25 μm)
Surface Polishing: Single-sided polishing (SMP) or double-sided polishing (DMP), roughness Ra < 0.5 nm
Crystal Structure: Zincblende
Band Gap: 1.344 eV (300 K)
Conductivity Type: N-type (S-doped, Sn-doped), P-type (Zn-doped), semi-insulating (SI)
Dislocation Density (EPD) ≤ 5 × 10⁴ cm⁻³ (intrinsic material)
Mobility: 50–70 cm²/V·s (standard), high-purity materials can reach >11,000 cm²/V·s. Process and application related parameters: Applicable epitaxial technologies: MOCVD, MBE; supports the growth of lattice-matched materials such as InGaAs and InGaAsP.