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Zone Melting Monocrystalline Silicon Wafers

Zone Melting Monocrystalline Silicon Wafers Zone Melting Monocrystalline Silicon Wafers Zone Melting Monocrystalline Silicon Wafers Zone Melting Monocrystalline Silicon Wafers

Product name:Zone Melting Monocrystalline Silicon Wafers

Item:ZMW06

Details:

Semiconductor FZ High Resistance Intrinsic Zone Melting Semiconductor Monocrystalline Silicon Chip High Purity Monocrystalline Silicon
 
Zone melting single crystal specifications:
High resistance: Conductive type N&P, crystal orientation 1-0-0/1-1-1, diameter 76.2-20mm, resistivity>1000 Ω. cm
Neutron irradiation (NTD): Conductive type N, crystal orientation 1-0-0/1-1-1, diameter 76.2-20mm, resistivity 30-800 Ω. cm
Czochralski zone melting (CFZ): Conductive type N&P, crystal orientation 1-0-0/1-1-1, diameter 76.2-20mm, resistivity 1-50 Ω. cm
Gas phase doping (GD): Conductive type N&P, crystal orientation 1-0-0/1-1-1, diameter 76.2-20mm, resistivity 0.001~300 Ω. cm
Thickness: ≥ 160um
 
Product Usage:
 
Ultra high resistance zone melting silicon single crystal:
Low impurity content and low defect density;
Silicon single crystal with perfect lattice structure;
No impurities are introduced during the crystal growth process;
The resistivity is usually above 1000 Ω. cm;
High back pressure devices;
Optoelectronic devices.
 
Vapor Doped Zone Melted Silicon Single Crystal:
Resistivity range: 0.001~300 Ω. cm;
Gas doped silicon single crystals with resistivity uniformity comparable to neutron irradiation;
Various semiconductor power devices;
Insulated gate bipolar transistor (IGBT);
Efficient solar cells.
 
Czochralski zone fused silicon single crystal:
Directly combining with zone melting processes;
Special elements such as gallium (Ga) and germanium (Ge) can be added;
Applied to high-efficiency solar cells produced by special processes such as special structures, back contact, and HIT;
LED, power devices, automobiles, satellites, etc.
 
Neutron irradiated zone melted silicon single crystal:
Silicon rectifier, thyristor, giant transistor;
Thyristors, static induction thyristors;
Insulated gate bipolar transistor (IGBT), ultra-high voltage diode;
Intelligent power devices and power integrated devices;
Various types of frequency converters, rectifiers, and high-power control devices;
Main functional materials for new power electronic devices;
Main functional materials for various detectors, sensors, optoelectronic devices, and special power devices.


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